Synthesis and application of a new Ti precursor, Ti(MPD)(MDOP)2 for the metal-organic chemical vapor deposition of TiO2 thin films

초록

A novel Ti precursor, Ti(MPD)(MDOP)2 was synthesized and applied for liquid source metal-organic chemical vapor deposition (LS-MOCVD) of TiO2 thin films. It is stable in moisture and solvents, such as tetrahydrofurane (THF) and toluene. Moreover, it is thermal stable, and does not leave any residue during the evaporation process. As a comparison, Ti(MPD)(tmhd)2 and Ti(tmhd)2(i-OPr)2 was adopted for the deposition of TiO2 thin films. Ti(MPD)(MDOP)2 demonstrates much higher deposition rate than Ti(MPD)(tmhd)2 or Ti(tmhd)2(i-OPr)2. The deposited TiO2 films show a low carbon content with smooth surface morphology.