Nb-Si-N의 열적 안정성

초록

Abstract : In this study NbSixNy films were deposited on (100)Si wafers using a reactive sputtering technique and their thermal stability indispensable for a barrier metal against Cu was investigated using sheet resistance measurement, X-ray diffraction, and Auger electron spectroscopy depth profiling. The N2/Ar gas flow ratio for the sputtering deposition of the TaSixNy film with the highest thermal stability was found to be 5%. The NbSixNy film failed at 700℃. The failure mechanism of the NbSixNy is as follows : Cu atoms move to the NbSixNy/Si interface through the NbSixNy film and react with Si atoms in the Si substrate resulting in the formation of Cu3Si at the NbSixNy/Si interface.