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Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors
- Nguyen, Manh-Cuong;
- Nguyen, An Hoang-Thuy;
- Ji, Hyungmin;
- Cheon, Jonggyu;
- Kim, Jin-Hyun;
- ... Choi, Rino;
- 외 3명
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20초록
A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.
키워드
Band tail; charge pumping (CP); conduction band edge; density of states (DOSs); indium gallium zinc oxide (IGZO); metal-oxide (MO)-semiconductor; oxygen vacancy; single pulse; thin-film transistor (TFT); trap density; trap profiling; DENSITY-OF-STATES; SUBGAP DENSITY; EXTRACTION; NMOSFETS; TIME; DOS
- 제목
- Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors
- 저자
- Nguyen, Manh-Cuong; Nguyen, An Hoang-Thuy; Ji, Hyungmin; Cheon, Jonggyu; Kim, Jin-Hyun; Yu, Kyoung-Moon; Cho, Seong-Yong; Kim, Sang-Woo; Choi, Rino
- 발행일
- 2018-09
- 유형
- Article
- 권
- 65
- 호
- 9
- 페이지
- 3786 ~ 3790