Process and Device Simulation Based on Atomistic and Quantum Mechanical Approach in the Regime of sub-50nm Gate Length

초록

In this paper, we report simulation methods based on atomistic approach for sub-50nm gate length. Molecular dynamics (MD) is implemented for the ion implantation process to form ultra-shallow junctions [5-6]. And then, the diffusion process is simulated by using kinetic Monte Carlo (KMC) with the damages and dopants distribution from ion implantation in MD [7]. A device simulation is performed by using profiles from the results of KMC. As an exemplary case, we demonstrate FinFET of 20nm physical gate length.