상세 보기
초록
In this paper, a chamber has been developed to strip photoresists on large-area wafers. It is calculated by different RF-power and inlet flow rate of oxygen. And distribution of each species and velocity magnitude, which is 1mm above wafer surface, are investigated. The software that used is CFD-ACE+. The ashing rate is improved as RF-power and flow rate are increased. However the uniformity is decreased when those are increased.
- 제목
- CFD를 이용한 대면적 웨이퍼의 PR 식각 공정 분석
- 제목 (타언어)
- 대한전자공학회 학술대회
- 저자
- LEE SEUNG GOL
- 학회명
- 대한전자공학회 학술대회
- 개최지
- 제주도 라마다 호텔
- 학회 개최일
- 2016-06-22 ~ 2016-06-24