Electrode-dependent electrical switching characteristics of InGaZnO memristor

초록

To improve the electrical characteristics of an analog indium-gallium-zinc oxide (IGZO) memristor, two kinds of IGZO memristive device with different electrode materials were fabricated, and their electrical characteristics and switching mechanisms were analyzed. It was confirmed that the endurance and retention characteristics of the IGZO memristive device were improved, which was explained by the analysis of operation mechanism. Analog IGZO memristive devices operate through interfacial switching based on the Schottky barrier modulation resulting from the generation and recombination of oxygen vacancies, but the devices with silicon electrode perform analog switching based on conductive filaments through the forming process. The retention time of both devices was measured and estimated with exponential decay functions, and the pulse-induced learning characteristics were also verified. The electrical and synaptic characteristics were considered in the modified national institute of standards and technology (MNIST) database pattern recognition test, and the effects of retention and linearity of weight-update on the recognition rate were analyzed.

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