Alloyed 2D Metal-Semiconductor Atomic Layer Junctions

초록

We demonstrate that interfacial alloying can be achieved between semiconducting WSe2 transition metal dichalcogenide (TMD) channels and metallic NbSe2 TMD contact layers, forming metallic NbxW1-xSe2 inter-facial layers that aid in forming excellent electrical con-tact between the semiconducting and metallic TMD re-gions. This interfacial transition NbxW1-xSe2 structure considerably lowers the potential barrier height of the junction between 2D semiconductor-metal regions leading to significantly improved performance of the WSe2 based transistor device. The creation of such composi-tion engineered transition regions across 2D junctions between dissimilar TMD domains could be most im-portant in the design and fabrication of 2D atomic layer devices.