자화주파수에 따른 플라즈마 및 산화막식각특성에 관한 연구

초록

The semiconductor's design rule becomes more stringent, hence the silicon-dioxide etching technique is important issue. In this work we compared the etching characteristics of different three types of plasma source, Normal ICP, magnetized ICP and E-ICP™. The E-ICP™ source shows higher etch rate at lower pressure and this is advantageous for the fine pattern process. The etching characteristics were varied with external magnetic field frequency at E-ICP and this is examined with Nanospec™ and SEM. We designed Langmuir probe system for time resolved diagnosis. Ion density of E-ICP is varying periodically with the applied external magnetic field frequency.