Crossed Conducting Wire-Based Organic Field-Effect Transistors

초록

We demonstrate flexible woven-type organic field-effect transistors (OFETs) containing conducting wires as gate (G), source (S), and drain (D) electrodes. On various dielectric layers onto either free standing or polymer-embedded gate wires, S/D conducting wires are aligned and sequentially welded. To fabricate the conducting electrodes embedded in the supporting polymer layers, each wire are partially infiltrated to a soft polymer film and the air-exposed fraction of the wires are electrochemically polished. In addition, solution processed dielectric and organic semiconducting layers are directly deposited or transferred to complete various structures of OFETs including crossed conducting wire-type S/D and G electrodes. Electrical performances of the woven-type OFETs are characterized before and after an applied strain.