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초록
The films are composed of both amorphous phase and nano-crystallites. The presence of Si nano crystallites in the a-Si:H matrix was identified by the narrow Raman peak at 520 cm-1. Optical features of the a-Si:H films are sensitive to reaction gas condition. The intensity of the dominant PL peak of the films increased with varying the reaction gas ratio of SiH4/SiH4+He+Ar from 6/50 to 9/75; especially the highest PL peak is detected at wavelength of 480 nm. The nano-structure and PL phenomena of a-Si:H films are discussed in terms of various S value.
- 제목
- Variation in the nano-structure and optical features of a Si:H films with reaction gas condition and post-deposition heat-treatment
- 저자
- CHO NAMHEE
- 학회명
- The 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)