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Simulation of a silicon-pixel detector
- Kwon, Jiyeon;
- Ey, Sumin;
- Kim, Yoohan;
- Kweon, MinJung
SCOPUS
1초록
In heavy-ion collision experiments, many kinds of detectors are used for detecting particles. Especially, semiconductor detectors play a important role in determining the position of an incident particle thanks to their excellent position resolution. A charged particle passing through a semiconductor detector makes electron-hole pairs. The pairs go toward the electrodes following the electric field formed inside the detector. The trajectory and the momentum of the particle can be calculated by collecting the electrical signal induced by the movement of the pairs. In this study, we simulated a detector that consisted of p-type silicon pixels attached on an n-type silicon bulk. First we defined the geometrical and the electrical properties of the detector via the Graphical User Interface (GUI) of the simulation and executed the program. Then, a simulation based on the iteration method and the multigrid method was used to calculate the potential and the electric field and to show the signal generated by the passing particle. The simulation was based on the ROOT software developed by the CERN. © 2018 The Korean Physical Society. All rights reserved.
키워드
- 제목
- Simulation of a silicon-pixel detector
- 저자
- Kwon, Jiyeon; Ey, Sumin; Kim, Yoohan; Kweon, MinJung
- 발행일
- 2018
- 유형
- Article
- 저널명
- 새물리
- 권
- 68
- 호
- 2
- 페이지
- 189 ~ 195