A Precipitation Modeling of Implantation Induced Defects

초록

This paper reports Monte Carlo calculation of the bimolecular reaction of extended defects which successfully predicts both the as-implanted impurity profiles(SIMS) and the diffusion profiles for a wide range of implant and annealing conditions. Our Monte Carlo calculation is in quantitative agreement with the experimental deactivtion data and successfully reproduces the rapid deactivation at the beginning phase followed by slow deactivation thereafter.