표면탄성파 필터용 Pt 전극의 C4F8/Ar/Cl2 plasma Pt 식각

초록

An inductively coupled plasma(ICP) of C4F8/Ar/Cl2 gas mixture was used to etch Pt electrode of SAW filters. Photoresist was employed for patterning of Pt which was sputter-deposited on LiTaO3 substrates. By adjusting the gas mixture ratio, sidewall angle of Pt line was larger than 80 C without using hard mask, and there was no residues after etching. Fabricated SAW filters were measured in terms of frequency response.