Enhanced polarization in Hf1-xZrxO2 films through rapid thermal annealing followed by rapid cooling

Hwang, Kyungsoo; Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Park, Geon; Kim, Hyunsoo; Kim, Jae Kyeong; Choi, Rino

doi:10.1016/j.tsf.2026.141022

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Enhanced polarization in Hf1-xZrxO2 films through rapid thermal annealing followed by rapid cooling

Hwang, Kyungsoo;
Nguyen, An Hoang-Thuy;
Nguyen, Manh-Cuong;
Park, Geon;
Kim, Hyunsoo;
... Choi, Rino;
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초록

This study demonstrates a marked enhancement in the ferroelectricity of Hf1-xZrxO2 (HZO) films achieved by rapid cooling after rapid thermal annealing (RTA) crystallization. In a Mo/HZO/Mo capacitor stack, fast cooling in air or in deionized water nearly doubled the remanent polarization (2Pr=15.39 mu C/cm2) compared with conventional in-chamber cooling after RTA at 400 degrees C, without compromising reliability. Detailed analysis revealed a correlation between the cooling method and the phase composition of the HZO film. The quenching methods effectively suppressed the non-ferroelectric monoclinic phase, leading to a higher proportion of the ferroelectric orthorhombic phase, thereby increasing the overall polarization.

키워드

Hf1-xZrxO2; Thin film growth; Crystallization; Polarization; Annealing process; Low thermal budget; THIN-FILMS; FERROELECTRICITY

제목: Enhanced polarization in Hf1-xZrxO2 films through rapid thermal annealing followed by rapid cooling

저자: Hwang, Kyungsoo; Nguyen, An Hoang-Thuy; Nguyen, Manh-Cuong; Park, Geon; Kim, Hyunsoo; Kim, Jae Kyeong; Choi, Rino

DOI: 10.1016/j.tsf.2026.141022

발행일: 2026-09

유형: Article

저널명: Thin Solid Films

권: 850

언어: ENG

출판사: ELSEVIER SCIENCE SA

발행국가: 스위스

ISSN: E 1879-2731
P 0040-6090