Raman tensor studies on defective non-van der Waals Bi2O2Se

초록

The Raman tensors of the three modes at similar to 55, similar to 80, and similar to 160 cm(-1) for the non-van der Waals layered material Bi2O2Se, which were assigned to E-u, E-g, and A(1g), respectively, were experimentally investigated. Two modes at similar to 55 and similar to 80 cm(-1), which were not observable in perfect crystal Bi2O2Se in the backscattering configuration, owing to the Raman selection rule, were activated by defects. These two modes exhibit strong polarization dependence at line defects and the excitation energy; thus, their Raman polarizability tensors exhibit strong dependence on the defect morphology and geometric characteristics of Bi2O2Se. The results of this study confirm that the Raman tensors of nanocrystalline structures can be modulated by defects. (C) 2022 Author(s).

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