Forming, Compliance Free Operation in Al2O3/TiOx Based RRAM Array Using Naturally Generated AlOx Interlayer

초록

In this study, an AlOx layer was inserted into RRAM to address the forming and compliance current problems that concern filamentary RRAM, and its array performance was investigated. The top electrode deposited on TiOx was changed to Al to form an AlOx layer. And it was found that the AlOx. layer efficiently prevents the switching layer from breakdown during the forming step. To ensure reliability, DC endurance operation of 500 cycles was done, and 3x10(4) sec retention was confirmed. Finally, the desired weight could be precisely transferred to the 4x4 array, with a VMM error of less than 5%.

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