Kinetic Monte Carlo for Sequential Process Simulation of Nano-scale CMOIS

초록

We applied kinetic Monte Carlo method to sequential process simulation steps for the front-end process of sub-nanometer CMOS devices. In this paper, we report how KMC approach can be employed for atomistic simulation of the whole FET fabrication process. Discussion is made on how the enormous number of simulation particle should be treated for obtaining the whole S/D profile as well as the channel doping profile. Final impurity profiles for interfacing a device simulator are compared with the experimental data for proving the validity of KMC approach.