Design of molecular photoresists and all-dry processing strategies for EUV lithography

초록

In advanced semiconductor manufacturing, there is a critical need for photoresist materials that combine high-resolution patterning with excellent etch resistance. To achieve excellent etch resistance, organic molecular photoresist cores containing multiple aromatic rings were designed, offering enhanced glass transition temperature and structural stability. Fluorinated groups and electron-rich double bonds were introduced into the molecular core structure to promote efficient crosslinking under electron-beam (e-beam) or extreme UV (EUV) exposure. The synthesized resist was thermally evaporated under vacuum to form a uniform thin film. Following e-beam or EUV exposure, negative-tone patterns were obtained by solvent-free, sublimation-based dry development, followed by descum, dry etching, and dry photoresist removal processes. This approach mitigates pattern collapse and contamination typical of wet processing and demonstrates the feasibility of vacuum-deposit resist materials and fully dry patterning for next-generation EUV lithography. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

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