Kinetic Monte Carlo Modeling of Diffusion in Si Crystalline Materials

초록

In this paper, we report a lattice-free Kinetic Monte Carlo(KMC) result of born diffusion at low temperatures 450C and 550C with wacancy_interstitials (I) or vacancies (V) created in a B-doped maker layer(4X10B/cm per marker) by Si implantation (50KeV,10/cm). In this type of KMC model, point defects and dopants are treated at an atomic scale while they are which are given as input parameters from as initio calculations or experimental data. Especially, the formation of clusters and extended defects, which usually control the annealing kinerics after ion implantation, is to be minimized in the range of low doses in an effort to create dilute concentrarions of I and V. Therefore, simple vacancy and kick-out or interstittialcy mechanisms without interstitial clusters or extended defects are tested in these conditions and both are in a good agreement with the SIMS data. However, in these dilute concentrations vacancy mechanism plays a dominant role in B diffusion in place of the usual kick-out or interstitialcy mechanism in born enhanced diffusion.