2차원 양자 역학적 모델링 및 시뮬레이션 : FinFET

초록

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10~35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schr?inger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.