INVESTIGATION ON THE GROWTH MECHANISM OF ZINC OXIDE FILM PREPARED BY ELECTROCHEMICAL METHOD

초록

ZnO thin films were potentiostatically deposited on ITO electrode in 0.1 M Zn(NO3)2 and the film growth mechanism was investigated by using FTIR and electrochemical quartz crystal microbalance(EQCM). Intermediates formed in the initial stage were identified as soluble zinc hydroxides and a critical concentration of OH- was required for the ZnO to be deposited. A rapid growth rate of ZnO film observed in the presence of O2 was attributed to the higher cathodic current which produces OH-