상세 보기
초록
In this study, nc-Si:H films prepared by PECVD were investigated. The crystallinity, nano-structure and optical characteristics of the nc-Si:H films were investigated as a function of deposition parameters such as reaction gas, post-deposition heat-treatment and deposition time. The optical and nano-structural features of the films were examined by a spectro-fluoro-photometer, a X-ray diffractometer and a transmission electron microscope.
- 제목
- Effect of reaction gas on the structural and optical features of nc-Si:H thin films prepared by PECVD techniques
- 저자
- CHO NAMHEE
- 학회명
- The 11th Seoul International Symposium on the Physics of Semiconductors and Applications