BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors

Lee, Minjong; Kim, Jin-Hyun; Le, Dan N.; Lee, Seojun; Song, Si-Un; Choi, Rino; Ahn, Youngbae; Ryu, Seung Wook; Cha, Pil-Ryung; Nam, Chang-Yong; Park, Seongbin; Kang, Jongmug; Kim, Si Joon; Kim, Jiyoung

doi:10.1109/VLSITechnologyandCir46783.2024.10631444

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BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors

Lee, Minjong;
Kim, Jin-Hyun;
Le, Dan N.;
Lee, Seojun;
Song, Si-Un;
... Choi, Rino;
외 8명

Citations

SCOPUS

17

초록

We report the record-high remanent polarization value (2Pr 55 μC/cm2) at an ultra-low operating voltage (0.5 V) with effective 3 nm hafnium zirconium oxide (HZO) capacitors. This exceptional ferroelectric property is achieved at a back-end-of-line (BEOL) compatible temperature below 400°C. Moreover, our devices demonstrate configurable ferroelectric saturation characteristics, ensuring reliable and reproducible switching polarization states (Psw). These results potentially allow the design of novel ferroelectric device circuitry. This study highlights the feasibility of extremely low-power ferroelectric applications beyond 0.5 V operation in BEOL. © 2024 IEEE.

키워드

BEOL compatibility; configurable states; effective 3 nm HZO; reliability; ultra-low voltage

제목: BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors

저자: Lee, Minjong; Kim, Jin-Hyun; Le, Dan N.; Lee, Seojun; Song, Si-Un; Choi, Rino; Ahn, Youngbae; Ryu, Seung Wook; Cha, Pil-Ryung; Nam, Chang-Yong; Park, Seongbin; Kang, Jongmug; Kim, Si Joon; Kim, Jiyoung

DOI: 10.1109/VLSITechnologyandCir46783.2024.10631444

발행일: 2024

유형: Conference paper

저널명: Digest of Technical Papers - Symposium on VLSI Technology