메탄/수소/산소 게에서 마이크로웨이브 플라즈마 화학증착법을 이용한 다이아몬드 합성에 관한 연구

초록

In order to investigate the effect of oxygen on the diamond synthesis, the behaviors of diamond deposition using microwave plasma chemical vapor deposition method have been studied by varying the concentration of oxygen in the methane-hydrogen gas mixture. Diamond films are deposited on Si wafer at the condition of substrate temperature : 830℃∼890℃, total reaction pressure : 50 torr and they are characterized by scanning electron microscopy, Raman spectroscopy. The best crystallinity of the film at 3% methane concentration addition of oxygen to the CH4-H2O mixture gave an improved film crystallinity at 50% oxygen concentration.