Growth of Pure and Nd-Doped Bi4Ge3O12 Single Crystals

초록

The pure and Nd-doped Bi4Ge3O12(BGO) have been grown by an Czochralski method. The growth condition of pure and Nd-doped crystals were: pulling rate 2-1mm/hr, rotation rate 23rpm. Typical sizes of the crystals grown are 23mm in diameter and 70mm in length. Compared with Nd:YAG, the Nd:BGO has a broad absorption band at about 800nm, so they could absorb the pump light of a diode laser more effectively. Nd:BGO may be a promising laser material. Growth condition, morphology and chemical composition of the grown pure and Nd-doped BGO single crystal were studied. In order to find out uniformly distributed Nd ion concentration, Nd-doped BGO was analysed by quantitative energy dispersive X-ray analysis. Also we measured laser properties by IR, Raman and luminescence spectra.