Mass transport of In atoms and structural transformation of an In/Si(111) surface induced by PTCDA adsorption

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초록

Adsorption of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) molecules on various In-overlayer phases (root 3 x root 3, 2 x 2, and single-layer root 7 x root 3 (root 7 x root 3-SL)) on Si(111) was investigated using scanning tunneling microscope. On surfaces of all these phases, PTCDA molecules are initially adsorbed at defect sites. On root 3 x root 3, adsorbed molecules cover the surface disorderly and induce the development of small patches of 2 x 2. On the surface with mixed 2 x 2 and root 7 x root 3-SL phases, continued PTCDA adsorption increases the root 7 x root 3-SL area, and induces eventually the formation of a double-layer root 7 x root 3 phase. The adsorbed molecules aggregate, and some assemble on the root 7 x root 3-SL surface to form 2D molecular ordering in the herringbone structure. The development of new In-overlayer structures indicates that In atoms are additionally supplied to the surface by PTCDA adsorption, mass transported, and condensed to form higher-In-coverage phases. We propose that the adsorbed molecules displace or remove In atoms beneath them to bind more strongly to the underlying Si atoms than In atoms.

키워드

Scanning tunneling microscopy (STM)34910-perylene-tetracarboxylic-dianhydride (PTCDA)InSi(111)Mass transportStructural transformationSCANNING-TUNNELING-MICROSCOPYGROWTHFILMSELECTRONICSMOLECULESCRYSTALSLAYERLEED
제목
Mass transport of In atoms and structural transformation of an In/Si(111) surface induced by PTCDA adsorption
저자
Shin, DongchulWoo, JeongseokLee, Geunseop
DOI
10.1007/s40042-023-00762-5
발행일
2023-04
유형
Article
저널명
Journal of the Korean Physical Society
82
7
페이지
712 ~ 718