Optimized process of metal assisted silicon wet etching for antireflection layer

초록

In this paper, the silicon wet etching process using Au nano particles as a catalysis was optimized. Silicon was etched using various formations of Au nanoparticles fabricated by thermal annealing. Depending on process parameter, average radius of single particle was changed from 7 to 70 nm. As a result, reflectance of silicon substrate which was just 2 minutes etching was reduced to below 2 % in wide wavelength region, and even change the incident angle, reflectance was less than 5 %.