A photolithographic method for fabricating electron devices based on MOCVD-grown MoS2

초록

In modern electronics, two-dimensional (2D) materials which possess atomically thin layers and periodic network structures have emerged as a new paradigm of materials with a lot of potentials. To fully realize the important commercial applications that 2D materials in modern electronics, one of the key issues, such as development of adequate lithographic processing for 2D materials, must be resolved. Here, we report an unprecedented and reliable photolithographic process for large-area patterning of molybdenum disulfide (MoS2) films on both SiO2/Si and polymer substrates, as well as a lift-off of deposited metals on MoS2 films using an Irgacure 651-doped poly(methyl methacrylate) resist and a water-free developer. To verify the feasibility of our process, the fabrication and device performance of MoS2 field-effect transistors (FETs) is also presented. We expect the proposed method to provide a reliable route to device fabrication with 2D materials and to be an important step toward their commercialization.

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