Capacitive Neural Network Using Charge-Stored Memory Cells for Pattern Recognition Applications

  • Kwon, Daewoong
  • Chung, In-Young
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초록

We report on capacitive neural network using charge-stored memory cells. Threshold voltage ( )-adjusted memory cells are used as capacitors with different capacitances in the synapse array. The capacitor array detects output voltage difference induced by capacitive coupling from input voltages when outputting the data of weighted memory cells in a read operation. Thus, power consumption is significantly improved. To verify the validity of the capacitor synapse array, MNIST simulations are performed. Though misclassification rate is slowly saturated compared to that of the linear synapse because of the non-linear weights, blow 1 % difference in misclassification rate is successfully obtained.

키워드

Neuromorphic systemsynaptic devicecapacitive neural network
제목
Capacitive Neural Network Using Charge-Stored Memory Cells for Pattern Recognition Applications
저자
Kwon, DaewoongChung, In-Young
DOI
10.1109/LED.2020.2969695
발행일
2020-03
유형
Article
저널명
IEEE Electron Device Letters
41
3
페이지
493 ~ 496