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Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure
- Park, Geon;
- Nguyen, An H.;
- Nguyen, Manh-Cuong;
- Nguyen, Anh-Duy;
- Kim, Hyunsoo;
- ... Choi, Rino;
- 외 4명
WEB OF SCIENCE
5SCOPUS
7초록
In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of HfxZr1-xO2 (HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E-c) . A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E-c. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P-r (2P (r)=45.9 mu C/cm (2)) , than the control sample, while this significant increase of P-r was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.
키워드
- 제목
- Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure
- 저자
- Park, Geon; Nguyen, An H.; Nguyen, Manh-Cuong; Nguyen, Anh-Duy; Kim, Hyunsoo; Kim, Jaekyeong; Hwang, Kyungsoo; Shin, Hoyeon; Song, Siun; Choi, Rino
- 발행일
- 2024-10
- 유형
- Article
- 권
- 45
- 호
- 10
- 페이지
- 1997 ~ 2000