Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure

  • Park, Geon
  • Nguyen, An H.
  • Nguyen, Manh-Cuong
  • Nguyen, Anh-Duy
  • Kim, Hyunsoo
  • ... Choi, Rino
  • 외 4명
Citations

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5
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7

초록

In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of HfxZr1-xO2 (HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E-c) . A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E-c. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P-r (2P (r)=45.9 mu C/cm (2)) , than the control sample, while this significant increase of P-r was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

키워드

IronDielectric constantCapacitorsZirconiumDielectric measurementGrain sizeRandom access memoryHfxZr1-xO2 bilayerferroelectricantiferroelectricthin film growthvoltage distributionpolarizationcoercive fieldlow power consumption
제목
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1-xO2 Bilayer Structure
저자
Park, GeonNguyen, An H.Nguyen, Manh-CuongNguyen, Anh-DuyKim, HyunsooKim, JaekyeongHwang, KyungsooShin, HoyeonSong, SiunChoi, Rino
DOI
10.1109/LED.2024.3435381
발행일
2024-10
유형
Article
저널명
IEEE Electron Device Letters
45
10
페이지
1997 ~ 2000