ELECTRIC AND MAGNETIC FIELD EFFECTS ON THE MAGNETOSTRICTIVE THIN FILM FOR MEMS

초록

This paper presents the control of magnetostriction and magnetization of the magnetostrictive thin film via additional electric field with orginal low magnetic field for MEMS application. To exam the electric field effect on the magnetostrictive thin film deposited on each substrate, Si and polyimide(Kapton, Dupon corp.) substrates are used. To get the experimental sample and use Joule effect of magnetostrictive film, TbDyFe this films are deposited on the Si of 50 um thic polyimide of 127 um thick substrateds. Both the Si and polyimide substrates habe the size of 10mm*1.5mm. For the thin film deposition, DC magnetron sputtering is used with TbDyFe composite target. During the measurement of magnetization and magnetrostriction, 0-50V electric fields are applied under 50T magnetic fields. As a result, 3% of magnetostriction is enhanced compare with no electric field.