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초록
The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25um CD by E-ICP and ICP reveals that E-ICP has better quality than ICP. The etch rate and the microloading effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.
- 제목
- 실리레이션 감광제공정과 E-ICP 플라즈마
- 제목 (타언어)
- The silylation photoresist process and the enhanced inductively coupled plasma
- 저자
- PARK SEGEUN