Peeling-Off Effect and Field-Effect Modulation on Palladium-Top-Gated Indium Gallium Zinc Oxide Thin Film Transistors for Hydrogen Sensor

초록

Hydrogen gas is one of the most promising future clean energy sources, which has great merits of high energy efficiency, non-pollution, and non-depletable. However, the high dangers still be remained for flammable and explosive possibility above 4 % concentrations hydrogen in ambient air. In this study, we propose a palladium (Pd) top-gated indium gallium zinc oxide (IGZO) thin film transistor (TFT) based hydrogen sensor application, reusable, reliable, and stable for above 4 % high concentrations hydrogen gas exposure. The sensing mechanism is based on the peeling-off effect of the Pd thin film came from the phase transition phenomenon of Pd hydride system formation process. The Pd top-gated IGZO TFT hydrogen sensor shows both fast response time of 30 s and recovery time of 50 s with high sensitivity of ~1,600,000 % even under the high concentration hydrogen gas condition. © 2025, Korean Vacuum Society. All rights reserved.

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