상세 보기
SiO2 식각 특성 개선을 위한 E-ICP와 ICP 식각 비교
Improvement of SiO2 Etching Characteristics by E-ICP
초록
The etch characteristics of E-ICP and ICP are compared for the improvement of SiO2 etch process. Etch rate and etch pattern profile are measured by α-step surface profiler and SEM, respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.
- 제목
- SiO2 식각 특성 개선을 위한 E-ICP와 ICP 식각 비교
- 제목 (타언어)
- Improvement of SiO2 Etching Characteristics by E-ICP
- 저자
- O BEOM HOAN
- 학회명
- Proceedings of IEEK Fall Conference'99