Low-temperature Passivation of Flexible a-InGaZnO Thin-film Transistors Using Self-Assembled Monolayer Treatment

초록

InGaZnO(IGZO) has been researched intensively for large area flat panel display application, because it has advantages in carrier mobility, film uniformity, and manufacturing cost compare to its counterparts. However, performance and reliability of IGZO channel thin-film transistors (TFTs) are highly affected by ambient moisture and oxygen. Passivation of an a-IGZO channel is one of the key processes in TFT fabrication to maintain high performance and reliability. Recently, IGZO TFT has been studied to implement flexible electronics. In this study, a self-assembled monolayer(SAM) is applied to flexible a-IGZO TFTs to passivate devices at low temperatures. Since a SAM is produced and deposited at low temperature and makes the surface exhibit the properties of functional groups, it can be a good candidate for low-temperature passivation. The thermal evaporation method was used for SAM treatment as in Fig.1, and octadecyle-tricholorocilane (OTS)was used as a SAM to passivate the surface of the flexible IGZO TFTs to hydrophobic surface. It was confirmed that the degradation of the electrical of the IGZO TFTs was reduced with the SAM treatment and the reliability of the TFT device was significantly improved.