Stabilization of 5 wt % 'Sb' doped SnO2 thin film by post oxidation of thermally evaporated metallic layer

초록

In this work we intend to stabilize 5 wt% 'Sb' doped SnO2 onto glass substrate by post oxidation of metallic layer deposited by thermal evaporation using homogenous Sn-Sb (5 wt %) alloy formed by vacuum arc melting. We have deposited 35 nm and 45 nm thick metallic layers and post annealed at 500 degrees C/2h in air. The XRD patterns of as-deposited metallic thin films changed over to oxidized SnO2 and SnO phases with tetragonal and orthorhombic mixed structure. Transmittance of annealed films were around 75% and 33% for the 35 nm and 45 nm thick samples respectively for 550 nm wavelength in visible region. Resistivity measured by four probe technique was around 1.525.10(-2) Omega m and 1.300.10(-3) Omega m for the oxidized 35 nm and 45 nm films respectively. The results of stabilized 5 wt% 'Sb' doped SnO2 films is promising for further exploration.

키워드