Comparison of the dielectric properties of ALD-Al2O3 films prepared using O3 and H2O as an oxidant

초록

It has been found that the use of O3 does not significantly alter the growth rate or thickness uniformity when compared with H2O based Al2O3 films. Even without any heat treament or preventive layer for the formation of metallic clusters, the Al2O3 films prepared with O3 have significantly less amount of defect atates like Al-Al and OH bonds compared with the those prepared with H2O. the films show device quality leakage characteristics in MIS capacitor structure. The Al2O3 film prepared with O3 shows 1-2 order lower leakage current density compared with the Al2O3 film prepared with H2O, demonstrating improved interface charateristics. The wet etch rate has been found to have little effect on Al2O3 films prepared using O3 compared with those prepared with H2O. The superior quality of Al2O3 film prepared with O3 may well be utilized in fabricating devices as capacitor dielectrics or gate oxides.