Thermal effect on the I-V characteristics of TiO 2 and GaN sol-gel driven Schottky diode

초록

TiO 2 and GaN thin film were successfully fabricated on Si substrate by a sol-gel method. However, thin films did not show crystallinity structure without any treatment. To increase the crystallinity of thin films, TiO 2 thin films were annealed while GaN was annealed under NH3 gas flow. The annealing temperature range was 700∼900°C, and the effects of thermal effect on the structural and electrical properties of TiO 2 and GaN films were studied. The resulting films show high crystallinity as indicated via the XRD analysis. As annealing temperature increases up to 900°C, the grain size and the surface roughness increases. Sol-gel thin film driven Schottky diodes are fabricated with Si and Al electrodes, and characterized by measuring their current-voltage behavior with -2∼2 V range. TiO 2 and GaN Schottky diode with high crytallinity structure show a high forward current. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).