금속 촉매의 형태에 따른 실리콘 습식 식각의 특성 평가

초록

A polished flat silicon (Si) surface has a high natural reflectivity in visible range with a strong spectral dependence. The minimization of reflection losses is very important for solar cells, and hence, a variety of applications has been developed. Lowering surface reflectivity of Si by texturization is one of the most important processes for improving the conversion photovoltaic efficiency of Si solar cells. Si surface texturization based on a noble metal assisted chemical wet etching has been reported. It is performed in a solution containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) which does not etch Si except in the presence of noble metal catalysts. The localized Si dissolution results in the formations of textured surface on the Si wafer. We fabricated metal nano particle which has various formation and evaluate wet etching characteristics.