홀로우 캐소드 플라즈마의 듀얼챔버에 대한 중성입자 유동 해석

초록

It is very important to know gas flow dynamics in a reaction chamber of dry etching or chemical vapor deposition. In this work, dual chamber for photoresist stripping process is modeled and is neutral gas flow patterns arer analyzed using CF design simulator. Each chamber has a hollow cathode ontop and wafer stage an bottom. For photoresist stripping Hz gas is used and inlet gas flow rate is 2000 sccm and chamber pressure 2.2 torr. Velocity and flux of neutral Hz gas molecules on wafer stage and overall flow patterns from gas inlet to chamber exhaust are studied