A Complete Dry Lithography Using Plasma Processes

초록

The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern as accelerating voltage of 30kilovolt, ranging the dose of 1-500μC/cm2 the pattern was developed with dty type and formed by plasma etching. By analyzing the molecule structure using FT-IR, it was confirmed that the thin films of PPMST contain the functional radicals of the MST monomer. The thin films of PPMST had a highly cross-linked structure resulting in a higher molecule weight than the conventional resist. The deposition rate of the PPMST thin films was 230-600 Angstrom/minite as a function of 50-200watt power and 200-60 Angstrom/minite as a function 0.1-0.7 torr pressure. The etching rate of the thin films of PPMST was 875-3520 Angstrom/minite as a function of 50-200 watt power and 2870-360 Angstrom/minite as a function 0.2-0.7 torr pressure. The sensitivity and contrast of the PPMST resist were 5μC/cm2 and 4.5, respectively. The resolution of resist was 50 nanometer and various patterns having the size of 0.2 micron, 100 nanometer, 70 nanometer, 50 nanometer, 35 nanometer, 20 nanometer were successfully formed.