Potential energy storage progress of Zr-doped SnO2 nanoparticles across a wide temperature

초록

Flexible dielectric Zr-doped SnO2 nanoparticles were synthesized using an economical chemical co-precipitation method. X-ray diffraction revealed a high dielectric tetragonal phase. The phase was consistent over a wide range of Zr-doping levels in the Sn lattice governing dielectric strength. Transmission electron microscopy revealed an increase in particle size as the doping concentration was increased. Systematic variation of Zr revealed a carrier transition between the Zr and Sn sites, according to X-ray photoelectron spectroscopy. The colossal dielectric constant was observed over a broad range of temperatures (30-280 degrees C). The dielectric loss was greatly minimized by heavy Zr doping. Overall, the Zr can increase the dielectric constant and generate considerably smaller losses compared to the undoped material. The AC electrical conductivity decreased rapidly because of the inclusion of Zr. Hence, Zr doping decreased the conductivity of SnO2 towards zero, resulting in a good dielectric condition. The impedance (Z) measurements revealed a decrease in barrier height, confirming the dielectric nature. The dielectric exhibited typical behavior and was stable under various temperatures because Zr can withstand high heat energy.

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