InP/InGaAs Based Hi-Lo Avalanche Photodiode Photodetectors for High Speed Optical Communication

초록

We present an overview on the progress of InP/InGaAs based Hi-Lo APDs, which are important for long-haul optical fiber communication. Much of recent research efforts have been focused on improving the operation reliability, the gain bandwidth product, and reducing the esces noise factor. To achieve a high GB product and a reliable operation, the redcution of the thickness of the multiplication layer and an optimum design of the internal electric field distributio are essential.