플라즈마 식각 공정을 통한 블랙 실리콘층의 제작

초록

Many texturing technique for fabricating antireflective silicon surfaces have been proposed, including mechanical diamond saw cutting, optical interference lithography, wet etching using catalysis of metal and reactive ion etching, to produce so-called "black silicon". In this paper, we attempted to chlorine and oxygen based inductively coupled plasma etching for formation of black silicon. When combined to oxygen gas, self-masking effect was generated because of photoresist ashing process at low temperature, and silicon pillar was grown up because of physical etching characteristic of chlorine gas. The etched silicon surface shows almost zero reflectance in the visible region. The silicon surface is covered by columnar microstructures with variable diameter and height that depends on experiment parameters.