레이저에 의한 포토레지스트의 마스크리스 페터닝

초록

By irradiating photoresist on Si or glass with Ar+ (λ=514 ㎚, CW) and Nd:YAG (λ=266 and 532㎚, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was 25 J/cm2 and the damage of substrate was appeared over 40 J/cm2.