Investigation of Coupling Effect on Capacitor-based Neural Network

초록

In this paper, we investigate the coupling effect on flash cell capacitor-based neural network. Since the readout scheme is implemented to float unselected wordline (WL), it is coupled to the across bitline (BL) and the neighbor WL voltage. Consequently, unselected cell causes the displacement current and affects the BL charge accumulation. We examine how the coupling effect affects Vector-Matrix Multiplication (VMM) and the neural network inference on the scaled device, using TCAD and system-level simulation.