Low temperature Passivation of Flexible a-InGaZnO Thin film Transistors Using Self-Assembled Monolayer Treatment

초록

I n G a Z n O ( has been researched intensively for large area flat panel display application, because it has advantage s in carrier mobility, film uniformity, and manufacturing cost comp are to its counterparts. However, performance and reliability of IGZO channel thin film transistors (TFTs) are highly affected by ambient moisture and oxygen. Passivation of an a IGZO channel is one of the key processes in TFT fabrication to maintain high performance and reliability. Recently, IGZO TFT has been studied to implement flexible electronics. In this study, a self assembled monolayer(SAM) is applied to flexib le a IGZO TFTs to passivate devices at low temperature s . Since a SAM is produced and depo sited at low temperature and makes the surface exhibit the properties of functional groups, it can be a good candidate for low temperature passivation. T he t hermal evaporation method was used for SAM treatment as in Fig.1, and octadecyle tricholorocilane ( OTS)was used as a SAM to passiva te the surface of the flexible IGZO TFT s to hydrophobic surface. It was confirmed that the degradation of the electrical of the IGZO TFT s was reduced with the SAM treatment and the reliability of the TFT device was significa ntly improved.