Microstructural Features of Al doped ZnO Thin Films with Preferential Orientation

  • CHO NAMHEE

초록

AZO thin films were prepared by rf magnetron sputter techniques. Substrate temperature and sputter power were varied from 100 to 500oC and from 100 to 250 W, respectively. Sputter gas pressure ranged from 6 to 11 mTorr. Microstructural features were analyzed by TEM and XRD methods.

제목
Microstructural Features of Al doped ZnO Thin Films with Preferential Orientation
저자
CHO NAMHEE
학회명
Proceedings of the 7th Asia-Pacific Electron Microscopy Conference