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A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications
- Park, Hye Ryeon;
- Yoo, Jeong Gyu;
- Kang, Jong Mook;
- Cho, Min Kwan;
- Gong, Taeho;
- ... Choi, Rino;
- 외 8명
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3초록
In this study, the thermal budget of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500 degrees C) and time (1-48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.
키워드
Ferroelectricity; atomic layer deposition; Hf0.5Zr0.5O2; MFM capacitor; thermal budget
- 제목
- A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications
- 저자
- Park, Hye Ryeon; Yoo, Jeong Gyu; Kang, Jong Mook; Cho, Min Kwan; Gong, Taeho; Park, Seongbin; Lee, Seungbin; Kim, Jin-Hyun; Lee, Seojun; Choi, Rino; Kim, Harrison Sejoon; Jung, Yong Chan; Kim, Jiyoung; Kim, Si Joon
- 발행일
- 2023
- 유형
- Proceedings Paper
- 저널명
- 2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM