A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications

Park, Hye Ryeon; Yoo, Jeong Gyu; Kang, Jong Mook; Cho, Min Kwan; Gong, Taeho; Park, Seongbin; Lee, Seungbin; Kim, Jin-Hyun; Lee, Seojun; Choi, Rino; Kim, Harrison Sejoon; Jung, Yong Chan; Kim, Jiyoung; Kim, Si Joon

doi:10.1109/EDTM55494.2023.10103015

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A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications

Park, Hye Ryeon;
Yoo, Jeong Gyu;
Kang, Jong Mook;
Cho, Min Kwan;
Gong, Taeho;
... Choi, Rino;
외 8명

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초록

In this study, the thermal budget of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500 degrees C) and time (1-48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.

키워드

Ferroelectricity; atomic layer deposition; Hf0.5Zr0.5O2; MFM capacitor; thermal budget

제목: A Study on the Thermal Budget of Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors for Next-Generation Memory Applications

저자: Park, Hye Ryeon; Yoo, Jeong Gyu; Kang, Jong Mook; Cho, Min Kwan; Gong, Taeho; Park, Seongbin; Lee, Seungbin; Kim, Jin-Hyun; Lee, Seojun; Choi, Rino; Kim, Harrison Sejoon; Jung, Yong Chan; Kim, Jiyoung; Kim, Si Joon

DOI: 10.1109/EDTM55494.2023.10103015

발행일: 2023

유형: Proceedings Paper

저널명: 2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM

언어: ENG

출판사: IEEE

발행국가: 미국