Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs

제목
Effect of Si cap layer on interface quality and NBTI in Ge-on-si with HfSiO for High Mobility Channel pMOSFETs
저자
RINO CHOI
학회명
4th International Symposium on Advanced Gate Stack Technology